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VISHAY
BAR64V-04
Vishay Semiconductors
RF PIN Diodes - Dual, Series in SOT-23
Description
Characterized by low reverse Capacitance the PIN Diodes BAR64V-04 was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for this PIN Diodes are switches and attenuators in wireless, mobile and TVsystems.
2 1
1 2
18256
3
3
Features
* High reverse Voltage * Small reverse capacitance * High breakdown voltage
Mechanical Data
Case: Plastic case (SOT-23) Weight: approx. 8.1 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Applications
For frequency up to 3 GHz RF-signal tuning Signal attenuator and switches Mobile , wireless and TV-Applications
Parts Table
Part BAR64V-04 Ordering code BAR64V-04-GS18 or BAR64V-04-GS08 D4 Marking Remarks Tape and Reel
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Symbol VR IF Tj Tstg Value 100 100 150 - 55 to + 150 Unit V mA C C
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Reverse current Forward voltage Test condition IR = 10 A VR = 50 V IF = 50 mA Symbol VR IR VF Min 100 50 1.1 Typ. Max Unit V nA V
Document Number 85694 Rev. 1.2, 26-Apr-04
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BAR64V-04
Vishay Semiconductors
Parameter Diode capacitance Test condition f = 1 MHz, VR = 0 f = 1 MHz, VR = 1 V f = 1 MHz, VR = 20 V Forward resistance f = 100 MHz, IF = 1 mA f = 100 MHz, IF = 10 mA f = 100 MHz, IF = 100 mA Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA Symbol CD CD CD rf rf rf trr Min Typ. 0.5 0.37 0.23 10 2.0 0.8 1.8 0.5 0.35 20 3.8 1.35 Max
VISHAY
Unit pF pF pF s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
100.00 100.0
rf - Forward Resistance ( ) I F - Forward Current ( mA )
f = 100 MHz 10.0
10.00
1.00
1.0
0.10
0.1 0.1
18342
1.0
10
100
0.01 0.5
18326
0.6
0.7
0.8
0.9
1.0
IF - Forward Current ( mA )
VF - Forward Voltage ( V )
Fig. 1 Forward Resistance vs. Forward Current
Fig. 3 Forward Current vs. Forward Voltage
0.50
CD - Diode Capacitance ( pF )
300 f = 1 MHz
V R - Reverse V oltage ( V )
0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8
250 200 150 100 50 0 0.01
12
16
20
24
28
18330
0.1
1.0
10
100
1000
18334
VR - Reverse V oltage (V)
IR - Reverse Current ( A )
Fig. 2 Diode Capacitance vs. Reverse Voltage
Fig. 4 Reverse Voltage vs. Reverse Current
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Document Number 85694 Rev. 1.2, 26-Apr-04
VISHAY
BAR64V-04
Vishay Semiconductors
12 10
I F - Forward Current ( mA )
8 6 4 2 0 -2 -4 -6 -8 -500 500
IF = 10 mA IR = 6 mA i rr = 3 mA
1500
2500
3500
18338
Recovery Time ( ns )
Fig. 5 Typical Charge Recovery Curve
Package Dimensions in mm (Inches)
3.1 (.122) 2.8 (.110) 0.4 (.016) 3
1.43 (.056) 1.33 (.052)
Mounting Pad Layout
0.8 (0.031)
0.9 (0.035)
2.0 (0.079)
1 0.95 (.037)
2 0.95 (.037)
max 0.1 (.004)
0.95 (0.037)
0.175 (.007) 0.125 (.005)
0.95 (0.037)
1.15 (.045)
0.95 (.037)
ISO Method A
2.6 (.102) 0.4 (.016) 0.4 (.016) 2.4 (.094)
17418
Document Number 85694 Rev. 1.2, 26-Apr-04
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BAR64V-04
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85694 Rev. 1.2, 26-Apr-04

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